- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
Patent holdings for IPC class H10B 51/30
Total number of patents in this class: 251
10-year publication summary
|
0
|
0
|
0
|
0
|
0
|
0
|
20
|
79
|
103
|
49
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
136 |
| Samsung Electronics Co., Ltd. | 131630 |
31 |
| Micron Technology, Inc. | 24960 |
12 |
| SK Hynix Inc. | 11030 |
8 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
6 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1290 |
5 |
| International Business Machines Corporation | 60644 |
4 |
| Kioxia Corporation | 9847 |
4 |
| Japan Science and Technology Agency | 1564 |
3 |
| Sandisk Technologies LLC | 5684 |
3 |
| IMEC VZW | 1410 |
3 |
| Sunrise Memory Corporation | 192 |
3 |
| Ferroelectric Memory GmbH | 64 |
3 |
| Intel Corporation | 45621 |
2 |
| Huawei Technologies Co., Ltd. | 100781 |
2 |
| Korea Advanced Institute of Science and Technology | 3906 |
2 |
| GLOBALFOUNDRIES U.S. Inc. | 6459 |
2 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
2 |
| Jonker LLC | 12 |
2 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
2 |
| Other owners | 16 |